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 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD1705
DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V(Min) *Good Linearity of hFE *Low Collector Saturation Voltage: VCE(sat)= 0.5V(Max.)@ IC= 6A *Complement to Type 2SB1154
APPLICATIONS *Designed for power switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
w w
scs .i w
VALUE 130 V 80 V 7 V 10 A 20 A 70 W
UNIT
.cn mi e
IC
Collector Current-Continuous
ICP
Collector Current-Pulse Collector Power Dissipation @ TC=25
PC Collector Power Dissipation @ Ta=25 TJ Junction Temperature 3
150
Tstg
Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL V(BR)CEO VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICBO IEBO hFE-1 hFE-2 hFE-3 fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base -Emitter Saturation Voltage Base -Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain CONDITIONS IC= 10mA; IB= 0 IC= 6A; IB= 0.3A
B
2SD1705
MIN 80
TYP.
MAX
UNIT V
0.5 1.5 1.5 2.5
V V V V A A
IC= 10A; IB= 1A IC= 6A; IB= 0.3A
B
IC= 10A; IB= 1A VCB= 100V; IE= 0
Current-Gain--Bandwidth Product
w w
w.
sem isc
VEB= 5V; IC= 0 IC= 0.1A; VCE= 2V IC= 3A; VCE= 2V IC= 6A; VCE= 2V IC= 0.5A; VCE= 10V IC= 6A, IB1= -IB2= 0.6A; VCC= 50V
.cn i
45 90 30 20 0.5 2.0 0.2
10 50
260
MHz
Switching Times ton tstg tf Turn-on Time Storage Time Fall Time s s s
hFE-2Classifications Q 90-180 P 130-260
isc Websitewww.iscsemi.cn
2


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